a1015 datasheet

a1015 datasheet :

Type Designator: A1015

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 130

Noise Figure, dB: -

Package: SOT23

Collection Dissipation : PC(max) = 400mW z Collector-Emitter Voltage : 

VCEO = -50V 

Absolute Maximum Ratings (TA=25o C) 

Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V 

Collector-Emitter Voltage VCEO -50 V Collector Current IC -150 mA 

Collector Dissipation PC 400 mW Junction Temperature TJ 150 o C 

Storage Temperature TSTG -55~+150 o C

Electrical Characteristics (TA=25o C)

Characteristic Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100µA, IE=0 -50 V

Collector-Emitter Breakdown Voltage BVCEO 

IC= -0.1mA, IB=0 -50 V 

Collector Cut-off Current ICBO VCB= -50V, IE=0 -0.1 µA 

Emitter Cut-off Current IEBO VEB= -5V, IC=0 -0.1 µA DC 

Current Gain hFE VCE= -6V, IC= -2mA 70 400

 Collector-Emitter Saturation Voltage VCE(sat)

 IC= -100mA, IB= -10mA -0.3 V Base-Emitter Saturation Voltage VBE(sat) 

IC= -100mA, IB= -10mA -1.1 V Base-Emitter Voltage VBE 

IE= -310mA -1.45 V Transition Frequency fT VCE= -10V, IC= -1mA f=30MHz 80 MHz